9014G データシートの表示（PDF） - Unisonic Technologies
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9014G Datasheet PDF : 3 Pages
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9014
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Dissipation
PC
450
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter on voltage
Output Capacitance
Current Gain-Bandwidth Porduct
Noise Figure
CLASSIFICATION OF hFE
SYMBOL
TEST CONDITIONS
BVCBO IC=100A, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100A, IC=0
ICBO VCB=50V, IE=0
IEBO VEB=5V, IC=0
hFE VCE=5V, IC=1mA
VCE(SAT) IC=100mA, IB=5mA
VBE(SAT) IC=100mA, IB=5mA
VBE(ON) VCE=5V, IC=2mA
Cob VCB=10V, IE=0, f=1MHz
fT
VCE=5V, IC=10mA
NF
VCE=5V, IC=0.2mA
f=1KHz, RS=2K
MIN TYP MAX UNIT
50
V
45
V
5
V
50
nA
100 nA
60
280 1000
0.14 0.3
V
0.84 1.0
V
0.58 0.63 0.7
V
2.2
3.5
pF
150 270
MHz
0.9
10
dB
RANK
RANGE
A
60-150
B
100-300
C
200-600
D
400-1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-031.C
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