2SA1015 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SA1015 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SA1015
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
-5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
VCB=-50V,IE=0
ICEO
VCE=-50V,IB=0
IEBO
VEB=-5V,IC=0
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
VCE=-6V,IC=-2mA
70
400
hFE
VCE=-6V,IC=-150mA
25 80
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
IC=-100 mA, IB=- 10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
f=30MHz
-0.1 -0.3 V
-1.1 V
80
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
130-200
H
200-400
C011
Rev.A
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