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MJD112 データシートの表示(PDF) - Continental Device India Limited

部品番号
コンポーネント説明
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MJD112
CDIL
Continental Device India Limited CDIL
MJD112 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN
MJD117 PNP
DPAK (TO-252)
Plastic Package
Designed for General Purpose Power and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation Tc=25ºC
Derate Above 25ºC
Total Power Dissipation Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
PD
Tj, Tstg
VALUE
100
100
5
2
4
50
20
0.16
1.75
0.014
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
*Rth (j-a)
6.25
71.4
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage
**VCEO(sus)
IC=30mA, IB=0
Collector Cut Off Current
ICEO
VCE=50V, IB=0
Collector Cut Off Current
ICBO
VCB=100V, IE=0
VCB=80V, IE=0
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
Collector Cut Off Current
ICEX
VCE=80V, VBE (off)=1.5V
VCE=80V, VBE (off)=1.5V,
Tc=125ºC
MIN TYP MAX
100
20
20
10
2.0
10
500
DC Current Gain
hFE
IC=0.5A, VCE=3V
500
IC=2A, VCE=3V
1000
IC=4A, VCE=3V
200
*These rating are applicable when surface mounted on the minimum pad sizes recommended
12000
**Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
MJD112_117 Rev220904E
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
UNIT
V
µA
µA
µA
mA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 6

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