ISL9003AIEMZ-T データシートの表示（PDF） - Renesas Electronics

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ISL9003AIEMZ-T

Low Noise LDO with Low IQ and High PSRR

Renesas Electronics 

ISL9003A

The LDO uses an independently trimmed 1V reference as its

input. An internal resistor divider drops the LDO output

voltage down to 1V. This is compared to the 1V reference for

regulation. The resistor division ratio is programmed in the

factory.

Overheat Detection

The bandgap outputs a proportional-to-temperature current

that is indicative of the temperature of the silicon. This

current is compared with references to determine if the

device is in danger of damage due to overheating. When the

die temperature reaches about +140°C, the LDO

momentarily shuts down until the die cools sufficiently. In the

overheat condition, if the LDO sources more than 50mA it

will be shut off. Once the die temperature falls back below

about +110°C, the disabled LDO is re-enabled and soft-start

automatically takes place.

Exposed Thermal Pad

The ISL9003A with µTDFN package has an exposed

thermal pad at the bottom side of the package. The PCB

layout should connect the exposed pad to some copper on

the component layer for a good thermal conductivity. Since

the copper area on the component layer is limited by the

surrounding pins of the package, it is more effective to use

some thermal vias to conduct the heat to other copper layers

if possible.

Electrically the copper and vias connecting to the exposed

pad should be isolated from any other pin connection, they

are strictly for thermal enhancement purpose.

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modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are

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FN6299 Rev 5.00

July 18, 2014

Page 10 of 12

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