IRFPC60LCPBF データシートの表示（PDF） - Vishay Semiconductors

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IRFPC60LCPBF

Power MOSFET

Vishay Semiconductors 

IRFPC60LC, SiHFPC60LC

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

600

RDS(on) (Ω)

VGS = 10 V

0.40

Qg (Max.) (nC)

120

Qgs (nC)

29

Qgd (nC)

48

Configuration

Single

D

TO-247AC

G

S

D

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V VGS Rating

• Reduced Ciss, Coss, Crss

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFETs technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of Power MOSFETs offer the

designer a new standart in power transistors for switching

applications.

The TO-247AC package is preferred for

commercial-industrial applications where higher power levels

preclude the use of TO-220AB devices. The TO-247AC is

similar but superior to the earlier TO-218 package because of

its isolated mounting hole.

TO-247AC

IRFPC60LCPbF

SiHFPC60LC-E3

IRFPC60LC

SiHFPC60LC

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).

c. ISD ≤ 16 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

LIMIT

600

± 30

16

10

64

2.2

1000

16

28

280

3.0

- 55 to + 150

300d

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91244

S11-0443-Rev. B, 14-Mar-11

www.vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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