BFG540-X データシートの表示（PDF） - Philips Electronics
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BFG540-X Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
5
0
0
20
MRA752
Gmax
GUM
40
60
IC (mA)
VCE = 8 V; f = 900 MHz.
MSG = maximum stable gain; Gmax = maximum available gain;
GUM = maximum unilateral power gain.
Fig.7 Gain as a function of collector current.
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
20
MRA753
Gmax
GUM
40
60
IC (mA)
VCE = 8 V; f = 2 GHz.
Gmax = maximum available gain;
GUM = maximum unilateral power gain.
Fig.8 Gain as a function of collector current.
handbook,5h0alfpage
gain
(dB) GUM
40
MSG
30
20
10
0
10
102
MRA754
Gmax
103
104
f (MHz)
IC = 10 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
Fig.9 Gain as a function of frequency.
2000 May 23
handbook,5h0alfpage
gain
(dB)
GUM
40
MSG
30
20
10
0
10
102
MRA755
Gmax
103
104
f (MHz)
IC = 40 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
Fig.10 Gain as a function of frequency.
6
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