KSD2058 データシートの表示（PDF） - Fairchild Semiconductor

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KSD2058

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSD2058

Low Frequency Power Amplifier

1

TO-220F

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (Ta=25°C)

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

VCEO

hFE

VCE(Sat)

VBE(on)

fT

Cob

tON

tSTG

tF

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn ON Time

Storage Time

Fall Time

VCB = 60V, IE = 0

VEB = 7V, IC = 0

IC = 50mA, IB = 0

VCE = 5V, IC = 0.5A

IC = 2A, IB = 0.2A

VCE = 5V, IC = 0.5A

VCE = 5V, IC = 0.5A

VCB = 10V, f = 1MHz

VCC = 30V, IC = 2A

IB1 = - IB2 = 0.2A

RL = 15Ω

hFE Classification

Classification

hFE

O

60 ~ 120

Y

100 ~ 200

Value

60

60

7

3

0.5

1.5

25

150

- 55 ~ 150

Units

V

V

V

A

A

W

W

°C

°C

Min.

60

8

Typ.

3

35

0.65

1.3

0.65

Max.

10

1

Units

µA

mA

V

1.5

V

V

0.4 MHz

pF

µs

µs

µs

G

150 ~ 300

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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