STD3NM50 データシートの表示（PDF） - STMicroelectronics
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STD3NM50
STMicroelectronics
STD3NM50 Datasheet PDF : 10 Pages
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STD3NM50/STD3NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 1.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400V, ID = 3A,
VGS = 10V
Qgd
Gate-Drain Charge
Min.
Typ.
7
10
5.5
2.5
2.4
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
) tr(Voff)
t(s tf
c tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480V, ID = 3A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
rodu ) SOURCE DRAIN DIODE
P t(s Symbol
Parameter
Test Conditions
te c ISD
Source-drain Current
le du ISDM (2) Source-drain Current (pulsed)
so ro VSD (1) Forward On Voltage
ISD = 3A, VGS = 0
b P trr
- O te Qrr
) le IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
t(s so trr
c b Qrr
u O IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
rod ) - Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
P t(s 2. Pulse width limited by safe operating area.
lete uc GATE-SOURCE ZENER DIODE
so rod Symbol
Parameter
b P BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
8
9
15
Max.
Unit
ns
ns
ns
Min.
Typ.
210
790
7.5
282
1.1
7.7
Max.
3
12
1.5
Unit
A
A
V
ns
nC
A
ns
µC
A
Min. Typ. Max. Unit
30
V
O solete PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
ObThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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