Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SK3766 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3766
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3766 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3766
r
th
– t
w
3
1
Duty
=
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
0.003
10
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
4.17°C/W
100
μ
1m
10 m
100 m
1
10
PULSE WIDTH t
w
(S)
SAFE OPERATING AREA
10
ID max (PULSE)
*
3
ID max (CONTINUOUS)
100
μ
s
*
1 ms
*
1
DC OPERATION
0.3
Tc
=
25°C
0.1
*
SINGLE NONPETITIVE PULSE
0.03
Tc
=
25°C
Curves must be derated linearly with
increase in temperature
VDSS max
0.01
1
10
100
1000
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
200
160
120
80
40
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
42.8 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-06
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]