VNB14N04(2012) データシートの表示（PDF） - STMicroelectronics

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VNB14N04
(Rev.:2012)

"OMNIFET" fully autoprotected Power MOSFET

STMicroelectronics 

VNB14N04 - VNK14N04FM - VNV14N04

Electrical specification

Table 4. Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IDSS

IISS

On(1)

Zero input voltage drain current (Vin = 0)

VDS = 13 V Vin = 0

VDS = 25 V Vin = 0

Supply current from input pin

VDS = 0 V Vin = 10 V

50 µA

200 µA

250 500 µA

VIN(th) Input threshold voltage

VDS = Vin ID + Iin = 1 mA

0.8

3V

RDS(on) Static drain-source on resistance

Vin = 10 V ID = 7 A

Vin = 5 V ID = 7 A

0.7 Ω

0.1 Ω

Dynamic

t(s) gfs (1) Forward transconductance

c Coss Output capacitance

du Switching(2)

ro td(on)

P tr

te td(off)

le tf

so td(on)

b tr

O td(off)

- tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t(s) (di/dt)on Turn-on current slope

uc Qi Total input charge

rod Source drain diode

P VSD (1)

te trr (2)

le Qrr (2)

so IRRM (2)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ObProtection

VDS = 13 V ID = 7 A

VDS = 13 V f = 1 MHz Vin = 0

8 10

S

400 500 pF

VDD = 15 V Id = 7 A

Vgen = 10 V Rgen = 10 Ω

(see Figure 26)

VDD = 15 V Id = 7 A

Vgen = 10 V Rgen = 1000 Ω

(see Figure 26)

VDD = 15 V ID = 7 A

Vin = 10 V Rgen = 10 Ω

VDD = 12 V ID = 7 A Vin = 10 V

60 120 ns

160 300 ns

250 400 ns

100 200 ns

300 500 ns

1.5 2.2 µs

5.5 7.5 µs

1.8 2.5 µs

120

A/µs

30

nC

ISD = 7 A Vin = 0

ISD = 7 A di/dt = 100 A/µs

VDD = 30 V Tj = 25 °C

(see test circuit, Figure 28)

1.6 V

110

ns

0.34

µC

6.1

A

Ilim Drain current limit

Vin = 10 V VDS = 13 V

Vin = 5 V VDS = 13 V

10 14 20 A

10 14 20 A

tdlim (2)

Tjsh (2)

Tjrs (2)

Step response

Current limit

Overtemperature shutdown

Overtemperature reset

Vin = 10 V

Vin = 5 V

30 60 µs

80 150 µs

150

°C

135

°C

5/17

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