MRF157 データシートの表示（PDF） - Motorola => Freescale
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MRF157 Datasheet PDF : 8 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)
D
Order this document
by MRF157/D
MRF157
600 W, to 80 MHz
MOS LINEAR
RF POWER FET
G
S
CASE 368–03, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
125
125
± 40
60
1350
7.7
– 65 to + 150
200
Max
0.13
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF157
1
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