FQD2N60C(2013) データシートの表示（PDF） - Fairchild Semiconductor
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FQD2N60C Datasheet PDF : 9 Pages
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FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
April 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
G
S
D
D-PAK
G
D
S
I-PAK
G!
D
!
●
◀▲
●
●
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD2N60C / FQU2N60C
600
1.9
1.14
7.6
± 30
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
1
FQD2N60C / FQU2N60C
2.87
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
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