BFR91 データシートの表示（PDF） - Planeta Semiconductor

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BFR91

NPN Silicon High-Frequency Transistor

Planeta Semiconductor 

BFR91

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

Characteristic

Symbol Min

Typ

DC CHARACTERISTICS

Collector Cutoff Current,

IE= 0mA, VCB=20V

Emitter Cutoff Current,

IC= 0mA, VEB= 2V

Collector – Emitter Breakdown Voltage,

IC= 1mA, IB= 0mA

DC Current Gain,

IE=30mA, VCB= 5V

AC CHARACTERISTICS

Transition Frequency,

IC=30mA, VCB= 5V, f=300MHz

Collector-Base Capacitance,

IE= 0mA, VCB=10V, f= 1MHz

Noise Figure,

IE= 2mA, VCE= 5V, f=500MHz, ZS=50Ω

Power Gain,

IE=30mA, VCE= 5V, f=500MHz, ZL=ZLopt

IE=30mA, VCE= 5V, f=800MHz, ZL=ZLopt

ICBO

IEBO

V(BR)CEO

hFE

–

–

12

25

fT

–

Ccb

–

NF

–

GPS

–

–

–

–

–

50

5.0

0.5

1.9

18.0

13.0

TIPICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

Max

100

10

–

150

–

0.9

–

–

–

Unit

nA

µA

V

–

GHz

pF

dB

dB

350

1

300

0,8

250

0,6

200

150

0,4

100

VCB=10V

0,2

f=1MHZ

50

0

0

20 40 60 80 100 120 140 160

Tamb - Ambient Temperature (°C)

Figure 1. Total Power Dissipation vs.

Ambient Temperature

0

0

5

10

15

20

VCB - Collector Base Voltage (V)

Figure 2. Collector – Base Capacitance vs.

Collector – Base Voltage

Ph./Fax: +7–816–2231736

E-mail: planeta@novgorod.net

http://www.novgorod.net/~planeta

2

PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia

© July 2000 Rev 1

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