Q67100-Q1139 データシートの表示（PDF） - Siemens AG

部品番号

コンポーネント説明

メーカー

Q67100-Q1139

3.3V 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh

Siemens AG 

HYB 3116(7)400BJ/BT(L) -50/-60/-70

3.3V 4M x 4-DRAM

AC Characteristics 5)6)

TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

16F

Unit Note

-50

-60

-70

min. max. min. max. min. max.

Common Parameters

Random read or write cycle time tRC

RAS precharge time

tRP

RAS pulse width

tRAS

CAS pulse width

tCAS

Row address setup time

tASR

Row address hold time

tRAH

Column address setup time

tASC

Column address hold time

tCAH

RAS to CAS delay time

tRCD

RAS to column address delay tRAD

time

RAS hold time

tRSH

CAS hold time

tCSH

CAS to RAS precharge time

tCRP

Transition time (rise and fall)

tT

Refresh period for HYB 3117400 tREF

Refresh period for HYB 3116400 tREF

Refresh period for L-version

tREF

Read Cycle

Access time from RAS

tRAC

Access time from CAS

tCAC

Access time from column

tAA

address

OE access time

tOEA

Column address to RAS lead

tRAL

time

Read command setup time

tRCS

Read command hold time

tRCH

90 –

110 –

130 –

ns

30 –

40 –

50 –

ns

50 10 k 60 10 k 70 10 k ns

13 10 k 15 10 k 20 10 k ns

0

–

0

–

0

–

ns

8

–

10 –

10 –

ns

0

–

0

–

0

–

ns

10 –

15 –

15 –

ns

18 37 20 45 20 50

13 25 15 30 15 35 ns

13

15 –

20 –

ns

50

60 –

70 –

ns

5

–

5

–

5

–

ns

3

50 3

50 3

50 ns 7

–

32 –

32 –

32 ms

–

64 –

64 –

64 ms

–

256 –

256 –

256 ms

–

50 –

60 –

70 ns 8, 9

–

13 –

15 –

20 ns 8, 9

–

25 –

30 –

35 ns 8,10

–

13 –

15 –

20 ns

25 –

30 –

35 –

ns

0

–

0

–

0

–

ns

0

–

0

–

0

–

ns 11

Semiconductor Group

8

Share Link: