BC857S データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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BC857S

SOT-363 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T SOT-363 Plastic-Encapsulate Transistors

BC857S DUAL TRANSISTOR (PNP+PNP)

FEATURES

z Two transistors in one package

z Reduces number of components and board space

z No mutual interference between the transistors

MARKING: 3C

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO

Collector- Base Voltage

-50

VCEO

Collector-Emitter Voltage

-45

VEBO

Emitter-Base Voltage

-5

IC

Collector Current -Continuous

-0.2

PC

RθJA

Collector Power Dissipation

0.3

Thermal Resistance from Junction to Ambient 417

TJ

Junction Temperature

150

Tssttgg

Storage Temperature

-55-150

Units

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol Test conditions

V(BR)CBO Ic=-10µA,IE=0

V(BR)CEO Ic=-10mA,IB=0

V(BR)EBO IE=-10µA,IC=0

ICBO

VCB=-30V,IE=0

hFE

VCE=-5V,IC=-2mA

VCE(sat)(1) IC=-10mA,IB=-0.5mA

VCE(sat)(2) IC=-100mA,IB=-5mA

VBE(1) VCE=-5V,IC=-2mA

VBE(2) VCE=-5V,IC=-10mA

fT

VCE=-5V,IC=-10mA,f=100MHz

Cob

VCB=-10V,IE=0,f=1MHz

VCE=-5V,Ic=-0.2mA,

NF

f=1kHZ,Rs=2KΩ,BW=200Hz

SOT-363

Min Typ Max Unit

-50

V

-45

V

-5

V

-15

nA

125

630

-0.3

V

-0.65 V

-0.6

-0.75 V

-0.82 V

200

MHz

3.5

pF

2.5

dB

www.cj-elec.com

1

E,Mar,2016

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