BF1105R データシートの表示（PDF） - NXP Semiconductors.
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BF1105R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient in free air note 1
thermal resistance from junction to soldering point
Note
1. Device mounted on a printed-circuit board.
VALUE
350
200
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
VG2-S (th) gate 2-source threshold voltage
IDSX
self-biasing drain current
IG1-SS
gate 1 cut-off current
IG2-SS
gate 2 cut-off current
VG1-S = VG2-S = 0; ID = 10 A
VG2-S = 0; ID = 0; IG1-S = 10 A
VG1-S = VDS = 0; IG2-S = 10 A
VG1-S = 5 V; VDS = 5 V; ID = 20 A
VG2-S = 4 V; VDS = 5 V
VG1-S = 5 V; VG2-S = 0; ID = 0
VG1-S = VDS = 0; VG2-S = 4 V
MIN.
7
7
7
0.3
8
TYP.
0.8
MAX. UNIT
V
V
V
1.2 V
16 mA
50 nA
20 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
forward transfer admittance pulsed; Tj = 25 C
25
31
mS
Cig1-ss
input capacitance at gate 1 f = 1 MHz
2.2 2.7 pF
Cig2-ss
input capacitance at gate 2 f = 1 MHz
1.6
pF
Coss
output capacitance
f = 1 MHz
1.2
pF
Crss
reverse transfer capacitance f = 1 MHz
25
40
fF
F
noise figure
f = 800 MHz; YS = YS opt
1.7 2.5 dB
Gp
power gain
GS = 2 mS; BS = BS opt; GL = 0.5 mS;
38
dB
BL = BL opt; f = 200 MHz; see Fig.16
GS = 3.3 mS; BS = BS opt; GL = 1 mS;
20
dB
BL = BL opt; f = 800 MHz; see Fig.17
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
85
dBV
fw = 50 MHz; funw = 60 MHz; see Fig.18
input level for k = 1% at 40 dB AGC;
100
dBV
fw = 50 MHz; funw = 60 MHz; see Fig.18
1997 Dec 02
4
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