MSC83301 データシートの表示（PDF） - STMicroelectronics

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MSC83301

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

STMicroelectronics 

MSC83301

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

. REFRACTORY/GOLD METALLIZATION

. EMITTER SITE BALLASTED

. VSWR CAPABILITY ∞:1 @ RATED

CONDITIONS

. HERMETIC STRIPAC® PACKAGE

. POUT = 1.0 W MIN. WITH 7.0 dB GAIN

@ 3.0 GHz

.250 2LFL (S010)

hermetically sealed

ORDER CODE

MSC83301

BRANDING

83301

PIN CONNECTION

DESCRIPTION

The MSC83301 is a common base hermetically

sealed silicon NPN microwave power transistor

utilizing an overlay, emitter site ballasted geome-

try with a refractory gold metallization system.

This device is capable of withstanding an infinite

load VSWR at any phase angle under rated con-

ditions. The MSC83301 is designed for Class C

amplifier/oscillator applications in the 1.0 - 3.0

GHz frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

PDISS

IC

VCC

TJ

TSTG

Parameter

Power Dissipation* (TC ≤ 50°C)

Device Current*

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

September 2, 1994

1. Collector

2. Base

3. Emitter

4. Base

Value

Unit

6.0

W

200

mA

30

V

200

°C

− 65 to +200

°C

25

°C/W

1/5

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