2SA746 データシートの表示（PDF） - New Jersey Semiconductor
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2SA746 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA746
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA;lB=0
-80
V
VcE(sat) Collector-Emitter Saturation Voltage
lc= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-2.0
V
-1.0 mA
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
-1.0 mA
HFE
DC Current Gain
lc= -3A ; VCE= -4V
30
fr
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
15
MHz
Switching times
tr
Rise Time
'stg
Storage Time
tf
Fall Time
lc= -3A ,RL= 40 , Veer -12V
!BI= -0.2A; \B?= 50mA
1.2
MS
3.3
|J S
0.8
|J S
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