2SA1640 データシートの表示（PDF） - Thinki Semiconductor Co., Ltd.

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2SA1640

40 Watt Silicon PNP Switching Power Transistor

Thinki Semiconductor Co., Ltd. 

2SA1640

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

®

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IBB=0

-30

V

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ; IE=0

-30

V

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

-5

V

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=B -0.1A

-0.4

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-3A ;IB=B -0.1A

VCB=-30V; IE=0

VEB=-5V; IC=0

-1.0

V

-10 μA

-10 μA

hFE

DC current gain

IC=-0.2A ; VCE=-2V

100

300

fT

Transition frequency

PACKAGE OUTLINE

IC=-0.5A ; VCE=-10V

20

TO-220F

MHz

© 2006 Thinki Semiconductor Co.,Ltd.

Dimensions In Millimeters

Page 2/2

http://www.thinkisemi.com/

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