2SA1662 データシートの表示（PDF） - Galaxy Semi-Conductor

部品番号

コンポーネント説明

メーカー

2SA1662

Silicon Planar Epitaxial Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Planar Epitaxial Transistor

2SA1662

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-1mA,IE=0

-80

V

Collector- emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0

-80

V

Emitter- base breakdown voltage

V(BR)EBO IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-80V,IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1 μA

DC current gain

Collector-emitter saturation voltage

Base-emitter

Transition frequency

hFE

VCE(sat)

VBE

fT

VCE=-2V,IC=-50mA

70

240

VCE=-2V,IC=-200mA 40

IC=-200mA,IB=-20mA

-0.4 V

VCE=-2V,IC=-5mA

-0.55

-0.8 V

VCE=-10V, IC=-10mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

14

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

70-140

FO

Y

120-240

FY

E041

Rev.A

www.gmesemi.com

2

Share Link: