SFH620A データシートの表示（PDF） - Infineon Technologies
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SFH620A Datasheet PDF : 3 Pages
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SFH620A
5.3 kV TRIOS Optocoupler
AC Voltage Input
FEATURES
• High Current Transfer Ratios
– at 10 mA: 40–320%
– at 1.0 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-emitter Voltage, VCEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
V
DE
VDE 0884 Available with Option 1
• SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620A features a high current transfer ratio,
low coupling capacitance and high isolation volt-
age. These couplers have a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon
planar phototransistor detector, and is incorporated
in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 VRMS or DC.
Dimensions in Inches (mm)
21
pin one ID
.255 (6.48)
.268 (6.81)
34
Anode/
Cathode
1
Cathode/
Anode
2
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
4 Collector
3 Emitter
4°
typ.
.018 (.46)
.022 (.56)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
10°
3°–9°
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
Maximum Ratings
Emitter
Reverse Voltage.................................................................................. 6.0 V
DC Forward Current........................................................................±60 mA
Surge Forward Current (tP≤10 µs) ....................................................±2.5 A
Total Power Dissipation.................................................................. 100 mW
Detector
Collector-emitter Voltage ..................................................................... 70 V
Emitter-collector Voltage..................................................................... 7.0 V
Collector Current .............................................................................. 50 mA
Collector Current (tP≤1.0 ms).......................................................... 100 mA
Total Power Dissipation.................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74........................................................................ 5300 VRMS
Creepage...................................................................................... ≥7.0 mm
Clearance ..................................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector .................... ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ................................................... 175
Isolation Resistance
VIO=500 V, TA=25°C....................................................................≥1012 Ω
VIO=500 V, TA=100°C..................................................................≥1011 Ω
Storage Temperature Range ............................................... –55 to +150°C
Ambient Temperature Range............................................... –55 to +100°C
Junction Temperature ....................................................................... 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)............................................. 260°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–249
February 24, 2000-19
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