Figure 1. Current Transfer Ratio (typ.)
vs. Temperature
IF=10 mA, VCE=5.0 V
Figure 4. Transistor Capacitance
(typ.) vs. Collector-emitter Voltage
TA=25°C, f=1.0 MHz
20
pF
15
C
10
Figure 7. Permissible Diode Forward
Current vs. Ambient Temperature
5
CCE
0
10-2
10-1
10-0 101 V 102
Ve
Figure 2. Output Characteristics (typ.)
Collector Current vs. Collector-emit-
ter Voltage TA=25°C
Figure 5. Permissible Pulse Handling Figure 8. Switching Times
Capability. Fwd. Current vs. Pulse Width Linear Operation (without saturation)
Pulse cycle D=parameter, TA=25°C
IF
RL=75 Ω
IC
VCC=5 V
Figure 3. Diode Forward Voltage
(typ.) vs. Forward Current
47 Ω
Figure 6. Permissible Power
Dissipation vs. Ambient Temperature
IF=10 mA, VCC=5.0 V, TA=25°C
Load Resistance RL 75 Ω
Turn-on Time
ton 3.0 µs
Rise Time
tr
2.0 µs
Turn-off Time
toff 2.3 µs
Fall Time
tr
2.0 µs
Cut-off Frequency FCO 250 kHz
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–251
SFH620A
February 24, 2000-19