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部品番号
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2N5321(2012) データシートの表示(PDF) - Comset Semiconductors
部品番号
コンポーネント説明
メーカー
2N5321
(Rev.:2012)
SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductors
2N5321 Datasheet PDF : 3 Pages
1
2
3
NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I
CBO
I
EBO
V
CEO
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
V
CB
= 80 V, I
E
=0
V
CB
= 60 V, I
E
=0
V
EB
= 5 V, I
C
=0
V
EB
= 4 V, I
C
=0
I
C
= 10 mA, I
B
=0
V
CEV
Collector Emitter
Breakdown Voltage
I
C
= 100 µA
V
BE
= 1.5V
V
EBO
Emitter Base Breakdown
Voltage
I
E
= 100 µA, I
C
=0
h
FE
(*) DC Current Gain
V
CE(SAT)
(*)
Collector-Emitter
saturation Voltage
I
C
= 500 mA
V
CE
= 4 V
I
C
= 1 A
V
CE
= 2 V
I
C
= 500 mA
I
B
= 50 mA
V
BE
(*)
f
T
Base-Emitter Voltage
Transition frequency
I
C
= 500 mA
V
CE
= 4 V
I
C
= 50 mA
V
CE
= 4 V
f = 10 MHz
I
C
= 500 mA
t
on
Turn-on Time
V
CC
= 30 V
I
B1
= 50 mA
I
C
= 500 mA
t
off
Turn-off Time
V
CC
= 30 V
I
B1
= -I
B2
= 50 mA
(*) Pulse conditions : tp < 300
µ
s,
δ
=1%
2N5320 -
2N5321 -
-
-
0.5
5
µA
2N5320 -
2N5321 -
0.1
0.5
-
-
µA
2N5320 75 -
2N5321 50 -
-
-
V
2N5320 100 -
2N5321 75 -
-
-
V
2N5320 6
2N5321 5
-
-
-
-
V
2N5320 30 - 130
2N5321 40
- 250
-
2N5320 10 -
-
2N5320 -
2N5321 -
2N5320 -
2N5321 -
-
-
0.5
0.8
V
-
-
1.1
1.4
V
2N5320
50 -
2N5321
- MHz
2N5320
-
2N5321
2N5320
-
2N5321
- 80 ns
- 800 ns
COMSET SEMICONDUCTORS
2/3
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