IRF1310S
4000
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
3000
C iss
2000
C oss
1000
Crss
0
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
1
VGS = 0V
0
0.5
1
1.5
2
2.5
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
I D = 25A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
30
60
90
120
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
100
100µs
10
1ms
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
100ms
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area