FQAF10N80 データシートの表示（PDF） - Fairchild Semiconductor
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FQAF10N80 Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
800 --
ID = 250 µA, Referenced to 25°C -- 0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.35 A
VDS = 50 V, ID = 3.35 A
3.0 --
5.0
V
-- 0.81 1.05
Ω
-- 8.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2100 2700 pF
-- 215 280
pF
-- 24
30
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 9.8 A,
RG = 25 Ω
VDS = 640 V, ID = 9.8 A,
VGS = 10 V
--
45 100
ns
-- 115 240
ns
-- 125 260
ns
--
75 160
ns
-- 55
71
nC
-- 12
--
nC
-- 26
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.7 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 38.5mH, IAS = 6.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
--
--
6.7
A
--
-- 26.8
A
--
--
1.4
V
-- 780
--
ns
-- 9.4
--
µC
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
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