FZT591 データシートの表示（PDF） - KEXIN Industrial

部品番号

コンポーネント説明

メーカー

FZT591

PNP Silicon Planar Medium Power Transistor

KEXIN Industrial 

SMD Type

TransistIoCrs

PNP Silicon Planar Medium Power Transistor

FZT591

■ Features

● Power Collector dissipation: PC=2W

● Continuous Collector Current: IC=-1A

SOT-223

6.50+0.2

-0.2

Unit: mm

3.50+0.2

-0.2

3.00+0.1

-0.1

4

1

2

3

2.9

4.6

0.70+0.1

-0.1

0.90+0.2

-0.2

7.00+0.3

-0.3

1 Base

2 Collector

3 Emitter

4 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Continuous Collector Current

Peak collector current

Power Collector dissipation

Operating and storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

ICM

PC

Tj,Tstg

Rating

-80

-60

-5

-1

-2

2

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

DC current gain

Transition frequecy

Output capacitance

* Pulse test: tp ≤ 300 μs; d ≤ 0.02.

■ Marking

Marking

591

Symbol

Test conditons

V(BR)CBO IC=-100μA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100μA

ICBO VCB=-60V, IE=0

IEBO VEB=-4V, IC=0

VCE(sat) IC=-1A,IB=-100mA

VBE(sat) IC=-1A,IB=-100mA

VBE(ON) IC=-1A,VCE=-5V

IC=-1mA, VCE=-5V*

IC=-500mA,VCE=-5V

hFE

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

fT IC=-50mA,VCE=-10V,f=100MHz

Cob VCB=-10V,f=1MHz

Unit

V

V

V

A

A

W

℃

Min Typ Max Unit

-80

V

-60

V

-5

V

-100 nA

-100 nA

-0.6 V

-1.2 V

-1.0 V

100

100

300

80

15

150

MHz

10 pF

1

www.kexin.com.cn

Share Link: