LH28F800SGN-L10 データシートの表示（PDF） - Sharp Electronics

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LH28F800SGN-L10

8 M-bit (512 kB x 16) SmartVoltage Flash Memory

Sharp Electronics 

1 INTRODUCTION

This datasheet contains LH28F800SG-L specifi-

cations. Section 1 provides a flash memory

overview. Sections 2, 3, 4, and 5 describe the

memory organization and functionality. Section 6

covers electrical specifications. LH28F800SG-L flash

memory documentation also includes ordering

information which is referenced in Section 7.

1.1 New Features

Key enhancements of LH28F800SG-L SmartVoltage

flash memory are :

• SmartVoltage Technology

• Enhanced Suspend Capabilities

• In-System Block Locking

• Permanent Lock Capability

Note following important differences :

• VPPLK has been lowered to 1.5 V to support

3.3 V and 5 V block erase, word write, and lock-

bit configuration operations. Designs that switch

VPP off during read operations should make sure

that the VPP voltage transitions to GND.

• To take advantage of SmartVoltage technology,

allow VCC connection to 2.7 V, 3.3 V or 5 V.

• Once set the permanent lock bit, the blocks which

have been set block lock-bit can not be erased,

written forever.

1.2 Product Overview

The LH28F800SG-L is a high-performance 8 M-bit

SmartVoltage flash memory organized as 512 k-

word of 16 bits. The 512 k-word of data is arranged

in sixteen 32 k-word blocks which are individually

erasable, lockable, and unlockable in-system. The

memory map is shown in Fig. 1.

SmartVoltage technology provides a choice of VCC

and VPP combinations, as shown in Table 1, to

meet system performance and power expectations.

2.7 to 3.6 V VCC consumes approximately one-fifth

LH28F800SG-L (FOR SOP)

the power of 5 V VCC. But, 5 V VCC provides the

highest read performance. VPP at 2.7 V, 3.3 V and

5 V eliminates the need for a separate 12 V

converter, while VPP = 12 V maximizes block erase

and word write performance. In addition to flexible

erase and program voltages, the dedicated VPP pin

gives complete data protection when VPP ≤ VPPLK.

Table 1 VCC and VPP Voltage Combinations

Offered by SmartVoltage Technology

VCC VOLTAGE

2.7 V

3.3 V

5V

VPP VOLTAGE

2.7 V, 3.3 V, 5 V, 12 V

3.3 V, 5 V, 12 V

5 V, 12 V

Internal VCC and VPP detection circuitry auto-

matically configures the device for optimized read

and write operations.

A command User Interface (CUI) serves as the

interface between the system processor and

internal operation of the device. A valid command

sequence written to the CUI initiates device

automation. An internal Write State Machine (WSM)

automatically executes the algorithms and timing

necessary for block erase, word write, and lock-bit

configuration operations.

A block erase operation erases one of the device’s

32 k-word blocks typically within 1.2 second (5 V

VCC, 12 V VPP) independent of other blocks. Each

block can be independently erased 100 000 times

(1.6 million block erases per device). Block erase

suspend mode allows system software to suspend

block erase to read data from, or write data to any

other block.

Writing memory data is performed in word

increments typically within 7.5 µs (5 V VCC, 12 V

VPP). Word write suspend mode enables the

system to read data from, or write data to any other

flash memory array location.

-5-

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