PSB61 データシートの表示（PDF） - Powersem GmbH
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PSB61 Datasheet PDF : 2 Pages
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PSB 61
200
[A]
150
100
TVJ= 150°C
50
TVJ= 25°C
IF
0
0.5
1
1.5
2
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1000
900
104
2
As
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
TVJ=45°C
TVJ=150°C
103
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
PSB
61
175
150
95
TC
0.34 0.22 = RTHCA [K/W] 100
0.47
105
110
125
0.72
115
100
75
50
25
PVTOT
0
IFAV2M0
1.22
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.72
40
6[0A]0
50
Tamb
120
125
130
135
140
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
80
[A]
60
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
2
K/W
1.5
1
Z thJK
Z thJC
0.5
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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