MMDF3N04HD データシートの表示（PDF） - Motorola => Freescale

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MMDF3N04HD

TMOS Dual N-Channel Field Effect Transistor

Motorola => Freescale 

MMDF3N04HD

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0)

(1) (3)

V(BR)DSS

Vdc

40

—

—

—

4.3

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

(Cpk ≥ 2.0)

(1) (3)

IDSS

IGSS

VGS(th)

µAdc

—

0.015

2.5

—

0.15

10

—

0.013

500

nAdc

Vdc

1.0

2.0

3.0

—

4.9

—

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.4 Adc)

(VGS = 4.5 Vdc, ID = 1.7 Adc)

(Cpk ≥ 2.0)

(1) (3)

RDS(on)

—

—

mΩ

55

80

79

100

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)

(1)

gFS

2.0

4.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 32 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

—

450

900

pF

—

130

230

—

32

96

Turn–On Delay Time

td(on)

—

9.0

18

ns

Rise Time

Turn–Off Delay Time

(VDD = 20 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

tr

td(off)

—

15

30

—

28

56

Fall Time

tf

—

19

38

Turn–On Delay Time

td(on)

—

13

26

ns

Rise Time

Turn–Off Delay Time

(VDD = 20 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

tr

td(off)

—

77

144

—

17

34

Fall Time

tf

—

20

40

Gate Charge

QT

—

13.9

28

nC

(VDS = 40 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc) (1)

Q1

—

2.1

—

Q2

—

3.7

—

Q3

—

5.4

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 3.4 Adc, VGS = 0 Vdc) (1)

(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

Vdc

—

0.87

1.5

—

0.8

—

Reverse Recovery Time

(IS = 3.4 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

Reverse Recovery Storage Charge

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.

trr

ta

tb

QRR

—

27

—

ns

—

20

—

—

7.0

—

—

0.03

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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