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部品番号
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2SK2719(2006) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK2719
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
Toshiba
2SK2719 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK2719
r
th
– t
w
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
Single pulse
0.01
0.005
0.003
10
μ
100
μ
1m
10 m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
1.0°C/W
100 m
1
10
Pulse width t
w
(s)
Safe Operating Area
30
10
ID max (pulsed)
*
100
μ
s
*
ID max (continuous)
3
1 ms
*
1
DC operation
0.5
Tc
=
25°C
0.3
0.1
*
: Single nonrepetitive pulse
0.05
Tc
=
25°C
0.03
Curves must be derated linearly
with increase in temperature.
0.01
1
3
10
30
100
VDSS max
300
1000
Drain-source voltage V
DS
(V)
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
60 mH
B
VDSS
I
AR
V
DD
V
DS
Wave form
Ε
AS
=
1·L·I
2
·
2
⎝⎛⎜⎜
B
VDSS
B
VDSS
−
V
DD
⎟⎟⎠⎞
5
2006-11-10
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