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BAW56DW データシートの表示(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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BAW56DW
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
BAW56DW Datasheet PDF : 4 Pages
1 2 3 4
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAW56DW SWITCHING DIODE
FEATURES
z Fast Switching Speed
z Ultra-Small Surface Mount Package
z For General Purpose Switching Applications
z High Conductance
MAKING: KJC
+-- +--
KJC
--+
KJC
--+
Solid dot = Pin1 indicate.
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings @Ta=25
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t= 8.3ms
Power Dissipation
Thermal Resistance From Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
SOT-363
654
123
Limit
75
300
150
2
200
625
150
-55~+150
Unit
V
mA
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Capacitance between terminals
Reveres recovery time
Symbol
Test conditions
Min
V(BR)
IR= 2.5µA
75
VR=75V
IR
VR=20V
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CT
VR=0, f=1MHz
IF=IR=10mA,Irr=0.1×IR,
trr
RL=100
www.cj-elec.com
1
Max
2.5
0.025
715
855
1000
1250
2
4
Unit
V
µA
mV
pF
ns
C,Mar,2016

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