AM29LV004B-1 データシートの表示（PDF） - Advanced Micro Devices

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AM29LV004B-1

4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

REVISION SUMMARY

Revision A (January 1998)

Initial release.

Revision B (June 1998)

Expanded data sheet from Advanced Information to

Preliminary version.

Distinctive Characteristics

Changed “Manufactured on 0.35 µm process technology”

to “Manufactured on 0.32 µm process technology”.

General Description

Second paragraph: Changed “This device is manufac-

tured using AMD’s 0.35 µm process technology” to

“This device is manufactured using AMD’s 0.32 µm

process technology”.

Revision C (January 1999)

Global

Removed the -80 speed option.

Distinctive Characteristics

Added bullet for 20-year data retention at 125°C.

DC Characteristics—CMOS Compatible

ICC1, ICC2, ICC3, ICC4, ICC5: Added Note 2 “Maximum

ICC specifications are tested with VCC = VCCmax”.

Revision D (November 18, 1999)

AC Characteristics—Figure 15. Program

Operations Timing and Figure 16. Chip/Sector

Erase Operations

Deleted tGHWL and changed OE# waveform to start at

high.

Physical Dimensions

Replaced figures with more detailed illustrations.

Revision D+1 (November 13, 2000)

Global

Added table of contents. Deleted burn-in option from

Ordering Information section.

Trademarks

Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29LV004B

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