HYB3164165AT データシートの表示（PDF） - Infineon Technologies

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HYB3164165AT

4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)

Infineon Technologies 

HYB3164(5/6)165AT(L)-40/-50/-60

4M x 16 EDO-DRAM

AC Characteristics (cont’d) 5)6)

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns

AC64-2E

Parameter

Symbol

Limit Values

Unit Note

- 40

- 50

- 60

min. max. min. max. min. max.

RAS pulse width in hyper page mode tRAS

40 200k 50 200k 60 200k ns

CAS precharge to RAS Delay

tRHPC 22 –

27 –

32 –

ns

OE pulse width

tOEP

5

–

5

–

5

–

ns

OE hold time from CAS high

tOEHC 5

–

5

–

5

–

ns

Output buffer turn-off delay from WE tWEZ 0 10 0 13 0 15 ns

OE setup time prior to CAS

tOES

5

–

5

–

5

–

ns

Hyper Page Mode (EDO) Read-

modify-Write Cycle

Hyper page mode (EDO) read-write tPRWC 44 – 54 – 63 – ns

cycle time

CAS precharge to WE

tCPWD 34 –

42 –

49 –

ns

CAS before RAS Refresh Cycle

CAS setup time

tCSR

5–5

– 5 – ns

CAS hold time

tCHR

5

–

5

–

10 –

ns

RAS to CAS precharge time

tRPC

5–5

– 5 – ns

Write to RAS precharge time

tWRP

5

–

5

–

10 –

ns

Write hold time referenced to RAS tWRH 5 – 5 – 10 – ns

Self Refresh Cycle (L-versions only)

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100k

69 –

-50 –

100k _

84 –

-50 –

100k _

104 –

-50 –

ns 17

ns 17

ns 17

Semiconductor Group

12

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