BDX14A データシートの表示（PDF） - Inchange Semiconductor

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BDX14A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BDX14A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0

VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

hFE

DC Current Gain

IC= -0.5A; VCE= -4V

VCE= -90V; VBE= 1.5V

VCE= -30V; VBE= 1.5V,TC=150℃

IC= -0.5A; VCE= -4V

fT

Current Gain-Bandwidth Product

IC= -0.2A; VCE= -10V

MIN MAX UNIT

-55

V

-60

V

-7

V

-1.0

V

-1.7

V

-1.0

-5.0

mA

25

250

4

MHz

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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