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BYV32-100 データシートの表示(PDF) - Vishay Semiconductors

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BYV32-100
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
BYV32-100 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
BYV32 Series
PIN 1
PIN 2
PIN 3
CASE
3
2
1
123
BYVF32 Series
PIN 1
PIN 2
PIN 3
D2PAK (TO-263AB)
K
2
1
BYVB32 Series
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
Package
18 A
50 V to 200 V
150 A
25 ns
0.85 V
150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
(for ITO-220AB and D2PAK (TO-263AB package))
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYV32-50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
50
VRMS
35
VDC
50
Maximum average forward rectified current at TC = 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IF(AV)
IFSM
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
TJ, TSTG
VAC
BYV32-100 BYV32-150
100
150
70
105
100
150
18
150
-65 to +150
1500
BYV32-200
200
140
200
UNIT
V
V
V
A
A
°C
V
Revision: 05-Jun-2019
1
Document Number: 88558
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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