BLT71 データシートの表示（PDF） - Philips Electronics

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BLT71

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLT71

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

operating junction temperature

open emitter

open base

open collector

up to Ts = 90 °C

MIN.

−

−

−

−

−

−65

−

MAX.

16

8

2.5

500

3.5

+150

175

UNIT

V

V

V

mA

W

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to

soldering point

CONDITIONS

Ptot = 3.5 W; up to Ts = 90 °C;

note 1

Note

1. Ts is the temperature at the soldering point of the collector lead.

VALUE

24

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.5 mA

16 −

V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA

8

−

V(BR)EBO emitter-base breakdown voltage

open collector; IE = 0.1 mA

2.5 −

ICES

collector leakage current

VCE = 8 V; VBE = 0

−

−

hFE

DC current gain

VCE = 5 V; IC = 100 mA

25 −

Cc

collector capacitance

VCB = 4.8 V; IE = ie = 0; f = 1 MHz −

−

Cre

feedback capacitance

VCE = 4.8 V; IC = 0; f = 1 MHz

−

−

−

V

−

V

−

V

100 µA

−

7

pF

5

pF

1995 Aug 17

207

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