BLF175 データシートの表示（PDF） - Philips Electronics
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BLF175 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLX94C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
VEBO
IC
IC(AV)
ICM
Ptot
Tstg
Tj
collector-emitter voltage (peak value)
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
operating junction temperature
VBE = 0
open base
open collector
f > 1 MHz
≤ Tmb = 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
MAX.
65
30
4
2.5
2.5
6
60
+150
200
UNIT
V
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to
mounting base (DC dissipation)
Ptot = 20 W;Tmb = 82 °C; Th = 70 °C
Rth j-mb
thermal resistance from junction to
mounting base (RF dissipation)
Ptot = 20 W;Tmb = 82 °C; Th = 70 °C
Rth mb-h
thermal resistance from mounting base Ptot = 20 W;Tmb = 82 °C; Th = 70 °C
to heatsink
VALUE
4
2.7
0.6
UNIT
K/W
K/W
K/W
10
handbook, halfpage
IC
(A)
1
MBH096
(2)
(1)
10−1
1
10
VCE (V)
102
(1) Tmb = 25 °C.
(2) Th = 70 °C.
Fig.2 DC SOAR.
handbook,6h0alfpage
Ptot
(W)
50
40
30
20
10
0
MBH097
(3)
(2)
(1)
50
Th (oC)
100
(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short-time operation during mismatch.
Fig.3 Power derating curves.
1996 Feb 06
3
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