DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SRDA05-4(2007) データシートの表示(PDF) - Semtech Corporation

部品番号
コンポーネント説明
メーカー
SRDA05-4
(Rev.:2007)
Semtech
Semtech Corporation Semtech
SRDA05-4 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SRDA05-4 and SRDA12-4
PROTECTION PRODUCTS
Applications Information (continued)
when the voltage exceeds the V of the diode. At first
approximation, the clamping voltFage due to the charac-
teristics of the protection diodes is given by:
VPCIN= VDCCe+scVrFipt(ifoonr spositive duration pulses)
V = -V
C
F
(for negative duration pulses)
However, for fast rise time transient events, the
effects of parasitic inductance must also be consid-
ered as shown in Figure 2. Therefore, the actual
clamping voltage seen by the protected circuit will be:
Figure 1 - “Rail-To-Rail” Protection Topology
V = V + V + L di /dt (for positive duration pulses)
C
CC
F
P ESD
(First Approximation)
V = -V - L di /dt
C
F G ESD
(for negative duration pulses)
ESD current reaches a peak amplitude of 30A in 1ns
for a level 4 ESD contact discharge per IEC 61000-4-2.
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L di /dt = 1X10-9 (30 / 1X10-9) = 30V
P ESD
Example:
Consider a V = 5V, a typical V of 30V (at 30A) for the
steering diodCeC and a series tracF e inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V = 5V + 30V + (10nH X 30V/nH) = 335V
C
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
the high V of the discrete diode. It is not uncommon
for the V Fof discrete diodes to exceed the damage
thresholdF of the protected IC. This is due to the
relatively small junction area of typical discrete compo-
nents. It is also possible that the power dissipation
capability of the discrete diode will be exceeded, thus
destroying the device.
Figure 2 - The Effects of Parasitic Inductance When
Using Discrete Components to Implement Rail-To-Rail
Protection
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
helps to mitigate the effects of parasitic inductance in
Figure 3 - Rail-To-Rail Protection Using
RailClamp TVS Arrays
© 2007 Semtech Corp.
6
www.semtech.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]