FMBL1G200US60 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FMBL1G200US60 Datasheet PDF : 9 Pages
| |||
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 200A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 200A
di / dt = 400 A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
19
25
855
1625
Max.
2.8
--
130
--
25
--
1600
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
Typ.
--
--
0.03
--
Max.
0.15
0.35
--
270
Units
°C/W
°C/W
°C/W
g
©2001 Fairchild Semiconductor Corporation
FMBL1G200US60 Rev. A
Share Link: 