FQD17P06TM データシートの表示（PDF） - Fairchild Semiconductor
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FQD17P06TM Datasheet PDF : 9 Pages
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Typical Performance Characteristics
VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
101
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.40
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
VGS = - 10V
VGS = - 20V
∝ Note : TJ = 25∩
10
20
30
40
50
60
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150∩
100
25∩
10-1
2
-55∩
∝ Notes :
1. VDS = -30V
2. 250レs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150∩
25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = -30V
8
VDS = -48V
6
4
2
∝ Note : ID = -17 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
3
FQD17P06 / FQU17P06 Rev C3
www.fairchildsemi.com
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