FZT558(1995) データシートの表示（PDF） - Diodes Incorporated.

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FZT558
(Rev.:1995)

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Diodes Incorporated. 

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH VOLTAGE TRANSISTOR

ISSUE 2 – DECEMBER 1995

FEATURES

* 400 Volt VCEO

* 200mA continuous current

* Ptot= 2 Watt

FZT558

C

E

PARTMARKING DETAIL - FZT558

ABSOLUTE MAXIMUM RATINGS.

C

B

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Power Dissipation

Ptot

Operating and Storage Temperature Range

Tj:Tstg

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

-400

V

-400

V

-5

V

-200

mA

2

W

-55 to +150

°C

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -400

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VBR(CEO) -400

V

IC=-10mA*

Emitter-Base Breakdown V(BR)EBO -5

Voltage

V

IE=-100µA

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

ICBO

ICES

IEBO

VCE(sat)

VBE(sat)

-100 nA

-100 nA

-100 nA

-0.2 V

-0.5 V

-0.9 V

VCB=-320V

VCE=-320V

VEB=-4V

IC=-20mA, IB=-2mA*

IC=-50mA, IB=-6mA*

IC=-50mA, IB=-5mA*

Base-Emitter

Turn On Voltage

VBE(on)

-0.9 V

IC=-50mA, VCE=-10V*

Static Forward Current hFE

100

Transfer Ratio

100

15

Transition

Frequency

fT

50

IC=-1mA, VCE=-10V

300

IC=-50mA, VCE=-10V*

IC=-100mA, VCE=-10V*

MHz

IC=-10mA, VCE=-20V

f=20MHz

Collector-Base

Cobo

Breakdown Voltage

5

pF

VCB=-20V, f=1MHz

Switching times

ton

toff

95

ns

1600

ns

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

IC=-50mA, VC=-100V

IB1=5mA, IB2=-10mA

3 - 192

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