CY7C1399D データシートの表示（PDF） - Cypress Semiconductor
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CY7C1399D Datasheet PDF : 10 Pages
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PRELIMINARY
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
tCDR [5]
tR[12]
Description
VCC for Data Retention
Data Retention Current Non-L, Com’l / Ind’l
L-Version Only
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
tCDR
CE
CY7C1399D
Min.
Max.
Unit
2.0
V
3
mA
1.2
mA
0
ns
tRC
ns
3.0V
tR
Switching Waveforms
Read Cycle No. 1[13, 14]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2[14, 15]
tRC
CE
tACE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs.
13. Device is continuously selected. OE, CE = VIL.
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Document #: 38-05467 Rev. *C
Page 6 of 10
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