NDS356AP データシートの表示（PDF） - Fairchild Semiconductor
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NDS356AP Datasheet PDF : 6 Pages
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Typical Electrical Characteristics (continued)
1.08
1.06
ID = -250µA
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
5
2
VGS = 0V
1
0.5
0.1
0.01
0.001
TJ = 125°C
25°C
-55°C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
600
400
300
Ciss
200
Coss
100
Crss
f = 1 MHz
50
VGS = 0 V
30
0.1
0.2
0.5
1
2
5
10
20
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics.
10
ID = -1.1A
8
6
VDS= -5V
-15V
-10V
4
2
0
0
1
2
3
4
5
6
7
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS356AP Rev.C1
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