PF0210 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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PF0210

MOS FET Power Amplifier Module for ADC Mobile Phone

Hitachi -> Renesas Electronics 

Electrical Characteristics (Tc = 25°C)

PF0210

Analog Transmission

Item

Symbol Min Typ Max

Frequency

f

824 —

849

Drain cutoff current

Total efficiency(1)

2nd harmonic distortion

I DS

—

ηT(1)

30

2nd H.D. —

—

500

34

—

–55 –30

3rd harmonic distortion 3rd H.D. —

–60 –40

Input VSWR

VSWR (in) —

2

3

Output power

Pout

6

9

—

Isolation

—

—

–45 –40

Stability

—

No parasitic oscillation

Unit Test Condition

MHz —

µA VDD = 17 V, VAPC = 0 V

% Pin = 3 dBm, VDD = 12.5 V,

dBc Pout = 6 W (VAPC controlled),

dBc

—

W

dBm

—

Pin = 3 dBm, VDD = 12.5 V,

VAPC = 4 V

Pin = 3dBm, VDD = 12.5 V,

VAPC = 0.5 V

Pin = 3 dBm, VDD = 12.5 V,

Pout ≤ 6 W,

Output VSWR = 20:1 All phases

Digital Transmission

Item

Frequency

Total efficiency(2)

Adjacent channel

leakage power

Input power

Symbol Min

f

824

ηT(2)

25

PADJ (30k) —

PADJ (60k) —

Pin

—

Typ Max Unit

Test Condition

— 849 MHz

—

30 — %

Pin controlled (π/4-DQPSK, √α =

–30 –28 dBc

0.35, 48.6 kbps),

–50 –46 dBc

BW =24.3 kHz with Root Nyquist

—5

dBm ave. Filter,

Pout = 5.5 W ave., VDD = 12.5 V

VAPC = 3.9 V

Mechanical Characteristics

Item

Torque for screw up the heatsink flange

Warp size of the heatsink flange: S

Conditions

M3 Screw Bolts

S

Spec

4 to 6 kg•cm

S=0

+0.3/– 0 mm

3

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