C5900 データシートの表示（PDF） - Inchange Semiconductor
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C5900 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5900
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1700V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1700
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
16
A
3.0
W
80
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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