2SC2776 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC2776

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC2776

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

20

V

4

V

30

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

35

—

Collector to emitter saturation VCE(sat)

—

0.8

voltage

Collector output capacitance Cob

—

1.1

Gain bandwidth product

Noise figure

fT

—

320

NF

—

5.5

Power gain

PG

—

17

Note: 1. The 2SC2776 is grouped by hFE as follows.

Grade

A

B

C

Mark

VA

VB

VC

hFE

35 to 70

60 to 120 100 to 200

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

0.5 µA

200

1.2 V

VCB = 10 V, IE = 0

VCE = 6 V, IC = 1 mA

IC = 10 mA, IB = 1 mA

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

—

MHz VCE = 6 V, IC = 1 mA

—

dB

VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 50 Ω

—

dB

VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 100 Ω,

RL = 550 Ω, Unneutralized

See characteristic curves of 2SC1342.

2

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