2SC4264 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

2SC4264

Silicon NPN Epitaxial

Renesas Electronics 

2SC4264

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

VCE(sat)

hFE

Cob

fT

Min

20

—

—

—

—

20

—

1.4

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, IE = 0

—

0.5

µA VCB = 15 V, IE = 0

—

10

µA VCE = 11 V, RBE = ∞

—

1.0

µA VEB = 3 V, IC = 0

—

0.7

V IC = 10 mA, IB = 5 mA

—

—

VCE = 10 V, IC = 5 mA

—

1.5

pF VCB = 10 V, IE = 0, f = 1MHz

—

—

GHz VCE = 10 V, IC = 10 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

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