2SD2441(2002) データシートの表示（PDF） - Panasonic Corporation
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2SD2441 Datasheet PDF : 4 Pages
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Transistors
2SD2441
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
10
V
Collector-emitter voltage (Base open) VCEO
10
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
1.5
A
Peak collector current
ICP
2
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
3.0±0.15
0.4±0.04
45˚
Marking Symbol: 1V
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
10
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
10
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
Collector-base cutoff current (Emitter open) ICBO VCB = 7 V, IE = 0
Forward current transfer ratio
hFE VCE = 1 V, IC = 400 mA
200
Collector-emitter saturation voltage
VCE(sat) IC = 1 A, IB = 25 mA
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
1
700
0.17 0.25
190
50
V
V
V
µA
V
MHz
pF
Forward voltage *
VF IF = 500 mA
1.3
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Applicable to the built-in diode.
Publication date: December 2002
SJC00262BED
1
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