ISPLSI1016E(1998) データシートの表示（PDF） - Lattice Semiconductor

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ISPLSI1016E
(Rev.:1998)

In-System Programmable High Density PLD

Lattice Semiconductor 

Specifications ispLSI 1016E

Absolute Maximum Ratings 1

Supply Voltage VCC ................................ -0.5 to +7.0V

Input Voltage Applied ........................ -2.5 to VCC +1.0V

Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V

Storage Temperature ................................ -65 to 150°C

Case Temp. with Power Applied .............. -55 to 125°C

Max. Junction Temp. (TJ) with Power Applied ... 150°C

1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation of the device at these or at any other conditions above those indicated in the operational sections of this specification

is not implied (while programming, follow the programming specifications).

DC Recommended Operating Conditions

SYMBOL

VCC

VIL

VIH

Supply Voltage

Input Low Voltage

Input High Voltage

PARAMETER

Commercial TA = 0°C to + 70°C

Industrial

TA = -40°C to + 85°C

Capacitance (TA=25oC, f=1.0 MHz)

MIN.

4.75

4.5

0

2.0

MAX. UNITS

5.25

V

5.5

V

0.8

V

Vcc+1

V

Table 2-0005/1016E

SYMBOL

PARAMETER

C1

Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance

(Commercial/Industrial)

C2

Y0 Clock Capacitance

Data Retention Specifications

TYPICAL

8

UNITS

pf

TEST CONDITIONS

VCC = 5.0V, VPIN = 2.0V

12

pf

VCC = 5.0V, VPIN = 2.0V

Table 2-0006/1016E

PARAMETER

Data Retention

Erase/Reprogram Cycles

MINIMUM

20

10000

MAXIMUM

–

–

UNITS

Years

Cycles

Table 2-0008/1016E

3

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