SD1476 データシートの表示（PDF） - Advanced Semiconductor
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SD1476 Datasheet PDF : 1 Pages
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SD1476
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1476 is a planar transistor
using diffused emitter ballasted
resistors for high linearity Class AB
operation in VHF and band 1 television
transmitters and transposers.
FEATURES:
• Common Emitter
• PG = 12 dB at 240 W/88 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
25 A
VCBO
70 V
VCEO
40 V
VEBO
4.0 V
PDISS
430 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.4 °C/W
PACKAGE STYLE .450 BAL FLG(B)
A
.120 x 45°
B
FULL R
C
ED
M
.208
.210
I
F
.050 NOM.
G
H
4X.060 R
J KL
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.373 / 9.47
.385 / 9.78
B
.205 / 5.21
C
.120 / 3.25
.130 / 3.30
D
.411 / 10.44
.421 / 10.69
E
.825 / 20.96
.865 / 21.97
F
.525 / 13.34
.535 / 13.59
G
1.255 / 31.88
1.265 / 32.18
H
1.675 / 42.55
1.685 / 42.80
I
.002 / 0.05
.006 / 0.15
J
.095 / 2.41
.105 / 2.67
K
.115 / 2.92
.135 / 3.43
L
.250 / 6.35
M
.445 / 11.30
.457 / 11.61
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
ICEO
VCE = 30 V
hFE
VCE = 5.0 V
IC = 7.0 A
COB
VCB = 28 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
70
40
4.0
10
10
50
220
UNITS
V
V
V
mA
---
pF
PG
VCE = 32 V IC = 2 X 400 mA
f = 88 MHz
12
dB
ηC
POUT = 240 W
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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